Shenghou Liu,: шукати на сайті Z-Library

Journal of Physics D Applied Physics

Рік:

2010

Мова:

english

Файл:

PDF, 1.44 MB

english, 2010

Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

Gong, Rumin, Wang, Jinyan, Dong, Zhihua, Liu, Shenghou, Yu, Min, Wen, Cheng P, Hao, Yilong, Shen, Bo, Cai, Yong, Zhang, Baoshun, Zhang, Jincheng

Журнал:

Рік:

2010

Мова:

english

Файл:

PDF, 920 KB

english, 2010

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

Qi Zhou,, Wanjun Chen,, Shenghou Liu,, Bo Zhang,, Zhihong Feng,, Shujun Cai,, Chen, Kevin J.

Рік:

2013

Мова:

english

Файл:

PDF, 1.34 MB

english, 2013

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 600V 1.3mμ·cm2 low-leakage low-current-collapse AlGaN/GaN HEMTs with AlN/SiNx passivation

Zhikai Tang,, Sen Huang,, Qimeng Jiang,, Shenghou Liu,, Cheng Liu,, Chen, Kevin J.

Рік:

2013

Мова:

english

Файл:

PDF, 738 KB

english, 2013

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Performance enhancement of normally-off Al2O3/AlN/GaN MOS-Channel-HEMTs with an ALD-grown AlN interfacial layer

Liu, Shenghou, Yang, Shu, Tang, Zhikai, Jiang, Qimeng, Liu, Cheng, Wang, Maojun, Chen, Kevin J.

Рік:

2014

Мова:

english

Файл:

PDF, 1.28 MB

english, 2014

Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment

Liu, Shenghou, Wang, Jinyan, Gong, Rumin, Lin, Shuxun, Dong, Zhihua, Yu, Min, Wen, C. P., Zeng, Chunhong, Cai, Yong, Zhang, Baoshun, Xu, Fujun, Zhang, Jincheng, Shen, Bo

Журнал:

Japanese Journal of Applied Physics

Рік:

2011

Мова:

english

Файл:

PDF, 674 KB

english, 2011

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Yang, Shu, Liu, Shenghou, Lu, Yunyou, Liu, Cheng, Chen, Kevin J.

Журнал:

IEEE Transactions on Electron Devices

Рік:

2015

Мова:

english

Файл:

PDF, 2.00 MB

english, 2015

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Normally-off GaN MIS-HEMT with improved thermal stability in DC and dynamic performance

Liu, Cheng, Wang, Hanxing, Yang, Shu, Lu, Yunyou, Liu, Shenghou, Tang, Zhikai, Jiang, Qimeng, Huang, Sen, Chen, Kevin J.

Рік:

2015

Файл:

PDF, 634 KB

2015

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Hua, Mengyuan, Liu, Cheng, Yang, Shu, Liu, Shenghou, Lu, Yunyou, Fu, Kai, Dong, Zhihua, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Рік:

2015

Мова:

english

Файл:

PDF, 407 KB

english, 2015

Effects of combined aqueous chlorine dioxide and UV-C on shelf-life quality of blueberries

Xu, Fangxu, Wang, Shenghou, Xu, Jie, Liu, Shiyang, Li, Guode

Журнал:

Postharvest Biology and Technology

Рік:

2016

Мова:

english

Файл:

PDF, 1.52 MB

english, 2016

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Impact of Vth shift on Ron in E/D-mode GaN-on-Si power transistors: Role of dynamic stress and gate overdrive

Yang, Shu, Lu, Yunyou, Liu, Shenghou, Wang, Hanxing, Liu, Cheng, Chen, Kevin J.

Рік:

2016

Мова:

english

Файл:

PDF, 947 KB

english, 2016

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

Wei, Jin, Lei, Jiacheng, Tang, Xi, Li, Baikui, Liu, Shenghou, Chen, Kevin J.

Журнал:

Journal of Food, Nutrition and Population Health

Рік:

2018

Мова:

english

Файл:

PDF, 1.05 MB

english, 2018

Physiological Responses of Banana Fruit to Two Structural Analogues of 1-MCP as Ethylene Action Inhibitors

Wang, Shenghou, Xu, Fangxu, Liu, Yefei, Dong, Shengzhong

Журнал:

Рік:

2018

Мова:

english

Файл:

PDF, 1.32 MB

english, 2018

The combined effect of ultraviolet-C irradiation and lysozyme coatings treatment on control of brown heart in Huangguan pears

Xu, Fangxu, Liu, Shiyang, Liu, Yefei, Xu, Qi, Wang, Shenghou

Журнал:

Scientia Horticulturae

Рік:

2019

Мова:

english

Файл:

PDF, 1.27 MB

english, 2019

A comprehensive framework for assessing and selecting appropriate scaffolding based on analytic hierarchy process

Dongping Fang, Qiping Shen, Shenghou Wu, Guiwen Liu

Журнал:

Journal of Safety Research

Рік:

2003

Мова:

english

Файл:

PDF, 245 KB

english, 2003

Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

Shenghou Liu, Yong Cai, Rumin Gong, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Jingjing Wang, Jiayun Yin, Cheng P. Wen, Hua Qin, Baoshun Zhang

Журнал:

physica status solidi (c)

Рік:

2012

Мова:

english

Файл:

PDF, 369 KB

english, 2012

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Shenghou Liu, Yong Cai, Guodong Gu, Jinyan Wang, Chunhong Zeng, Wenhua Shi, Zhihong Feng, Hua Qin, Zhiqun Cheng, Chen, K.J., Baoshun Zhang

Журнал:

Рік:

2012

Мова:

english

Файл:

PDF, 336 KB

english, 2012

High-Voltage (600-V) Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation

Tang, Zhikai, Huang, Sen, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Chen, Kevin J.

Журнал:

IEEE Transactions on Electron Devices

Рік:

2013

Мова:

english

Файл:

PDF, 615 KB

english, 2013

Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement

Zhou, Qi, Chen, Wanjun, Liu, Shenghou, Zhang, Bo, Feng, Zhihong, Cai, Shujun, Chen, Kevin J.

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 992 KB

english, 2013

Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Liu, Cheng, Liu, Shenghou, Huang, Sen, Chen, Kevin J.

Журнал:

Рік:

2013

Мова:

english

Файл:

PDF, 580 KB

english, 2013

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Multiple Ti/Al stacks induced thermal stability enhancement in Ti/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure

Dong, Zhihua, Wang, Jinyan, Gong, Rumin, Liu, Shenghou, Wen, C. P., Yu, Min, Xu, Fujun, Hao, Yilong, Shen, Bo, Wang, Yangyuan

Рік:

2010

Мова:

english

Файл:

PDF, 500 KB

english, 2010

5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

Zhang, Baoshun, Tan, Shuxin, Xu, Jicheng, Dong, Zhihua, Yu, Guohao, Cai, Yong, Xue, Lu, Chen, Hongwei, Hou, Keyu, Zhao, Desheng, Wang, Yue, Liu, Shenghou, Chen, Kevin J.

Журнал:

Electronics Letters

Рік:

2013

Мова:

english

Файл:

PDF, 260 KB

english, 2013

Degradation of transient OFF-state leakage current in AlGaN/GaN HEMTs induced by ON-state gate overdrive

Li, Baikui, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Chen, Kevin J.

Журнал:

Physica status solidi

Рік:

2014

Мова:

english

Файл:

PDF, 342 KB

english, 2014

AlN/GaN heterostructure TFTs with plasma enhanced atomic layer deposition of epitaxial AlN thin film

Liu, Cheng, Liu, Shenghou, Huang, Sen, Li, Baikui, Chen, Kevin J.

Журнал:

Physica status solidi

Рік:

2014

Мова:

english

Файл:

PDF, 411 KB

english, 2014

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Monolithically integrated 600-V E/D-mode SiNx/AlGaN/GaN MIS-HEMTs and their applications in low-standby-power start-up circuit for switched-mode power supplies

Tang, Zhikai, Jiang, Qimeng, Huang, Sen, Lu, Yunyou, Yang, Shu, Liu, Cheng, Tang, Xi, Liu, Shenghou, Li, Baikui, Chen, Kevin J.

Рік:

2013

Мова:

english

Файл:

PDF, 378 KB

english, 2013

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - AlGaN/GaN HEMTs with thermal oxidation treatment for microwave power applications

Meng, Di, Liu, Shenghou, Lin, Shuxun, Wen, Cheng P., Wang, Jinyan, Hao, Yilong, Wu, Wengang

Рік:

2012

Мова:

english

Файл:

PDF, 363 KB

english, 2012

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Yang, Shu, Liu, Shenghou, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Журнал:

Рік:

2014

Мова:

english

Файл:

PDF, 1.63 MB

english, 2014

Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer

Liu, Shenghou, Yang, Shu, Tang, Zhikai, Jiang, Qimeng, Liu, Cheng, Wang, Maojun, Shen, Bo, Chen, Kevin J.

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.84 MB

english, 2015

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Thermally induced threshold voltage instability of III-Nitride MIS-HEMTs and MOSC-HEMTs: Underlying mechanisms and optimization schemes

Yang, Shu, Liu, Shenghou, Liu, Cheng, Tang, Zhikai, Lu, Yunyou, Chen, Kevin J.

Рік:

2014

Мова:

english

Файл:

PDF, 453 KB

english, 2014

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

Hua, Mengyuan, Liu, Cheng, Yang, Shu, Liu, Shenghou, Fu, Kai, Dong, Zhihua, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.01 MB

english, 2015

Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier

Liu, Cheng, Yang, Shu, Liu, Shenghou, Tang, Zhikai, Wang, Hanxing, Jiang, Qimeng, Chen, Kevin J.

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 720 KB

english, 2015

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs

Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 1.28 MB

english, 2015

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - AlGaN/GaN dual gate MOS HFET for power device applications

Gong, Rumin, Wang, Jinyan, Liu, Shenghou, Dong, Zhihua, Wen, Cheng. P., Yu, Min, Cai, Yong, Zhang, Baoshun

Рік:

2010

Мова:

english

Файл:

PDF, 545 KB

english, 2010

Correction to “Thermally Stable Enhancement-Mode GaN Metal-Isolator-Semiconductor High-Electron-Mobility Transistor With Partially Recessed Fluorine-Implanted Barrier” [Apr 15 318-320]

Liu, Cheng, Yang, Shu, Liu, Shenghou, Tang, Zhikai, Wang, Hanxing, Jiang, Qimeng, Chen, Kevin J.

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 73 KB

english, 2015

High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Huang, Sen, Liu, Xinyu, Zhang, Jinhan, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Zheng, Yingkui, Liu, Honggang, Jin, Zhi, Zhao, Chao, Liu, Cheng, Liu, Shenghou, Yang, Shu, Zhang, Jincheng, Hao, Yue, Chen, K

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 788 KB

english, 2015

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Huang, Sen, Liu, Xinyu, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Sun, Bing, Yang, Xuelin, Shen, Bo, Liu, Cheng, Liu, Shenghou, Hua, Mengyuan, Yang, Shu, Chen, Kevin J.

Журнал:

IEEE Transactions on Electron Devices

Рік:

2015

Мова:

english

Файл:

PDF, 2.09 MB

english, 2015

Characterization of Leakage and Reliability of SiNₓ Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Hua, Mengyuan, Liu, Cheng, Yang, Shu, Liu, Shenghou, Fu, Kai, Dong, Zhihua, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Журнал:

Рік:

2015

Мова:

english

Файл:

PDF, 2.21 MB

english, 2015

Low On-Resistance Normally-Off GaN Double-Channel Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

Wei, Jin, Liu, Shenghou, Li, Baikui, Tang, Xi, Lu, Yunyou, Liu, Cheng, Hua, Mengyuan, Zhang, Zhaofu, Tang, Gaofei, Chen, Kevin

Журнал:

Semiconductor Science and Technology

Рік:

2015

Мова:

english

Файл:

PDF, 414 KB

english, 2015

Gate stack engineering for GaN lateral power transistors

Yang, Shu, Liu, Shenghou, Liu, Cheng, Hua, Mengyuan, Chen, Kevin J

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 2.11 MB

english, 2016

in GaN MIS-HEMTs

Yang, Shu, Lu, Yunyou, Wang, Hanxing, Liu, Shenghou, Liu, Cheng, Chen, Kevin J.

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 1.55 MB

english, 2016

Compatibility of AlN/SiN x Passivation With LPCVD-SiN x Gate Dielectric in GaN-Based MIS-HEMT

Hua, Mengyuan, Lu, Yunyou, Liu, Shenghou, Liu, Cheng, Fu, Kai, Cai, Yong, Zhang, Baoshun, Chen, Kevin J.

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 845 KB

english, 2016

[IEEE 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Sendai, Japan (2015.8.26-2015.8.28)] 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Nitridation interfacial-layer technology for enhanced stability in GaN-based power devices

Yang, Shu, Liu, Shenghou, Liu, Cheng, Lu, Yunyou, Chen, Kevin J.

Рік:

2015

Мова:

english

Файл:

PDF, 351 KB

english, 2015

Toward reliable MIS- and MOS-gate structures for GaN lateral power devices

Chen, Kevin J., Yang, Shu, Liu, Shenghou, Liu, Cheng, Hua, Mengyuan

Журнал:

Рік:

2016

Мова:

english

Файл:

PDF, 1.13 MB

english, 2016

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015)

Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui

Журнал:

Рік:

2015

Файл:

PDF, 27.23 MB

2015

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Performance enhancement and characterization techniques for GaN power devices

Yang, Shu, Liu, Shenghou, Liu, Cheng, Hua, Mengyuan, Longobardi, Giorgia, Udrea, Florin, Chen, Kevin J.

Рік:

2016

Мова:

english

Файл:

PDF, 18 KB

english, 2016

Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques

Yang, Shu, Liu, Shenghou, Lu, Yunyou, Chen, Kevin J.

Журнал: